IRFPS40N60K 01/30/02 www.irf.com 1 pd - 94384 smps mosfet hexfet ? power mosfet hard switching primary or pfc switch switch mode power supply (smps) uninterruptible power supply high speed power switching motor drive benefits applications low gate charge qg results in simple drive requirement improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche voltage and current enhanced body diode dv/dt capability parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 40 i d @ t c = 100c continuous drain current, v gs @ 10v 24 a i dm pulsed drain current 160 p d @t c = 25c power dissipation 570 w linear derating factor 4.5 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 5.5 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings super to-247ac avalanche characteristics symbol parameter typ. max. units e as single pulse avalanche energy ??? 600 mj i ar avalanche current ??? 40 a e ar repetitive avalanche energy ??? 57 mj symbol parameter typ. max. units r jc junction-to-case ??? 0.22 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance v dss r ds(on) typ. i d 600v 0.110 ? 40a
IRFPS40N60K 2 www.irf.com symbol parameter min. typ. max. units conditions g fs forward transconductance 21 ??? ??? sv ds = 50v, i d = 24a q g total gate charge ??? ??? 330 i d = 38a q gs gate-to-source charge ??? ??? 84 nc v ds = 480v q gd gate-to-drain ("miller") charge ??? ??? 150 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 47 ??? v dd = 300v t r rise time ??? 110 ??? i d = 38a t d(off) turn-off delay time ??? 97 ??? r g = 4.3 ? t f fall time ??? 60 ??? v gs = 10v,see fig. 10 c iss input capacitance ??? 7970 ??? v gs = 0v c oss output capacitance ??? 750 ??? v ds = 25v c rss reverse transfer capacitance ??? 75 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 9440 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 200 ??? v gs = 0v, v ds = 480v, ? = 1.0mhz c oss eff. effective output capacitance ??? 260 ??? v gs = 0v, v ds = 0v to 480v dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.63 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 0.110 0.130 ? v gs = 10v, i d = 24a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 50 a v ds = 600v, v gs = 0v ??? ??? 250 v ds = 480v, v gs = 0v, t j = 125 c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v static @ t j = 25 c (unless otherwise specified) i gss i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 38a, di/dt 150a/s, v dd v (br)dss , t j 150 c notes: starting t j = 25 c, l = 0.84mh, r g = 25 ? , i as = 38a, dv/dt =5.5v/ns (see figure 12a) pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss s d g diode characteristics a symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 40 mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 160 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25 c, i s = 38a, v gs = 0v ??? 630 950 t j = 25 c i f = 38a ??? 730 1090 t j = 125 c di/dt = 100a/s ??? 14 20 t j = 25 c ??? 17 25 t j = 125 c i rrm reverse recovery current ??? 39 58 a t j = 25 c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) t rr reverse recovery time q rr reverse recovery charge ns c
IRFPS40N60K www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 1000 i d , drain-to-source current (a) 4.5v 20s pulse width tj = 25 c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) 4.5v 20s pulse width tj = 150 c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.01 0.1 1 10 100 1000 4 6 8 10 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 38a
IRFPS40N60K 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 50 100 150 200 250 0 2 5 7 10 12 q , total gate char g e ( nc ) v , gate-to-source voltage (v) g gs i = d 38a v = 120v ds v = 300v ds v = 480v ds 0.1 1 10 100 1000 0.2 0.6 0.9 1.3 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 10000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 150 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRFPS40N60K www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFPS40N60K 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs v fig 13a. gate charge test circuit fig 13b. basic gate charge waveform fig 12a. maximum avalanche energy vs. drain current fig 12d. unclamped inductive waveforms fig 12c. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 14. threshold voltage vs. temperature 25 50 75 100 125 150 0 240 480 720 960 1200 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 17a 24a 38a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs(th) gate threshold voltage (v) i d = 250a
IRFPS40N60K www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer *
IRFPS40N60K 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/02 super to-247ac package outline dimensions are shown in millimeters (inches) b ? 1.60 [.063] 12 0.25 [.010] b a 3 0.13 [.005] 2.35 [.092] 1.65 [.065] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] e e 3x 1.60 [.062] 1.45 [.058] 16.10 [.632] 15.10 [.595] 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 1.30 [.051] 0.70 [.028] 13.90 [.547] 13.30 [.524] 16.10 [.633] 15.50 [.611] 4 0.25 [.010] ba 4 3.00 [.118] 2.00 [.079] a 2x r max . section e-e 2x 1.30 [.051] 1.10 [.044] 3x 1. dimens ioning and t ole rancing per as me y14.5m-1994. 2. dimensions are shown in millimeters [inches] 3. cont roll ing dime ns ion: mil lime t e r not e s : 4 . ou t l i ne conf or ms t o j e de c ou t l i ne t o- 2 7 4aa 3 - s ource 2 - drain 1 - gate 4 - drain 3 - emitter 4 - collect or 1 - gate 2 - collect or l e ad as s i gn me n t s mos f e t i gb t c
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